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| Power Transistor 2SD2382 Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 30 (Tc=25C) 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min 4 (Ta=25C) Unit A A V V V mJ External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 a b 16.9 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 ton (s) 0.25 tstg (s) 0.8 tf (s) 0.35 2.54 2.2 1.35 1.35 0.85 2.54 3.9 0.8 2.6 (13.5) 0.45 BCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 10 30mA 8 20mA s VCE (sat) -- IB Temperature Characteristics (typ.) 0.75 (IC = 1.5A) s IC -- VBE Temperature Characteristics (typ.) 6 5 VCE (sat) (V) 10mA 0.5 4 IC (A) IC (A) 6 5mA 4 3mA IB = 1mA 0.25 Ta = -55C 25C 75C 125C 3 2 1 Ta=55C 25C 75C 125C 2 0 0 1 2 3 4 5 0 1 5 10 50 100 400 0 0 0.5 1.0 1.5 VCE (V) IB (mA) VBE (V) s hFE -- IC Characteristics (typ.) 5000 Typ 1000 (VCE = 1V) s hFE -- IC Temperature Characteristics (typ.) 5000 (VCE = 1V) s j-a -- t Characteristics 5 1000 hFE hFE 500 500 100 50 30 0.01 100 50 30 0.01 Ta = -55C 25C 75C 125C 0.05 0.1 0.5 1 5 10 (C/W) j-a 1 0.5 0.3 1 5 10 50 100 500 1000 0.05 0.1 0.5 1 5 10 IC (A) IC (A) t (ms) s fT -- IE Characteristics (typ.) 30 25 20 Typ (VCE = 1V) s Safe Operating Area (single pulse) 20 c mse 0.5 ec 1ms ec c se 0m 10 s PC -- Ta Derating 30 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 5 D. C 10 ms IC (A) = PC (W) (T c 20 W ith in fT (MHz) 15 10 5 0 -0.01 1 0.5 Without heatsink natural air cooling 25 C ) fin 10 15 0 100 * 150 * *1 00 2 *2 50 * 5 0*2 Without heatsink ite he sin at k 0.1 -0.05 -0.1 -0.5 -1 -5 -10 1 5 10 50 100 0 0 50 100 150 IE (A) VCE (V) Ta (C) 59 |
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